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by L. Reggiani

  • ISBN: 0387133216
  • Category: Other
  • Author: L. Reggiani
  • Subcategory: Science & Mathematics
  • Other formats: lrf doc lit lrf
  • Language: English
  • Publisher: Springer Verlag (April 1, 1985)
  • Pages: 275 pages
  • FB2 size: 1652 kb
  • EPUB size: 1899 kb
  • Rating: 4.6
  • Votes: 469
Download Hot-Electron Transport in Semiconductors (Topics in Applied Physics) fb2

Hot-Electron Transport i. .has been added to your Cart. Hot Electron Transport in Semiconductors Topics in Applied Physics.

Hot-Electron Transport i. Series: Topics in Applied Physics (Book 58).

Volumes 1-56 are listed on the back inside cover. Main entry under title: Hot-electron transport in semiconductors. Topics in applied physics; v. 58) Includes index. Hot-Electron Transport in Semiconductors. With Contributions by M. Asche C. Canali E. Constant K. Hess G. J. Iafrate S. Komiyama T. Kurosawa T. Masumi E Nava Y. K. Pozhela L. Reggiani. Springer-Verlag Berlin Heidelberg GmbH. 1. Reggiani, L. (Lino), 1941-. II. Asche, M. (Marion) III.

Topics in Applied Physics. Transport parameters from microwave conductivity and noise measurements.

Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. We apply an atomistic quantum transport formalism based on empirical pseudopotentials

Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry. We apply an atomistic quantum transport formalism based on empirical pseudopotentials. Our results show that the turn-OFF behavior of aGNRFETs is seriously affected by source-to-drain tunneling at short channel lengths (. below 10 nm for 3-aGNRs).

Hot-Electron Transport in Semiconductors book. Hot-Electron Transport in Semiconductors (Topics in Applied Physics). 3540133216 (ISBN13: 9783540133216).

Автор: L. Reggiani; M. Asche; C. Canali; E. Constant; K. Название: Hot-Electron Transport in.

2014 Серия: Topics in Applied Physics Язык: English Издание: Softcover reprint of Иллюстрации: 26 illustrations, black and white; xvi, 275 p. 26 illus.

Physics Of Hot Electron . Manufacturer warranty may not apply.

The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and . The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented.

It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering.



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