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by L. Reggiani
Hot-Electron Transport i. .has been added to your Cart. Hot Electron Transport in Semiconductors Topics in Applied Physics.
Hot-Electron Transport i. Series: Topics in Applied Physics (Book 58).
Volumes 1-56 are listed on the back inside cover. Main entry under title: Hot-electron transport in semiconductors. Topics in applied physics; v. 58) Includes index. Hot-Electron Transport in Semiconductors. With Contributions by M. Asche C. Canali E. Constant K. Hess G. J. Iafrate S. Komiyama T. Kurosawa T. Masumi E Nava Y. K. Pozhela L. Reggiani. Springer-Verlag Berlin Heidelberg GmbH. 1. Reggiani, L. (Lino), 1941-. II. Asche, M. (Marion) III.
Topics in Applied Physics. Transport parameters from microwave conductivity and noise measurements.
Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. We apply an atomistic quantum transport formalism based on empirical pseudopotentials
Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry. We apply an atomistic quantum transport formalism based on empirical pseudopotentials. Our results show that the turn-OFF behavior of aGNRFETs is seriously affected by source-to-drain tunneling at short channel lengths (. below 10 nm for 3-aGNRs).
Hot-Electron Transport in Semiconductors book. Hot-Electron Transport in Semiconductors (Topics in Applied Physics). 3540133216 (ISBN13: 9783540133216).
Автор: L. Reggiani; M. Asche; C. Canali; E. Constant; K. Название: Hot-Electron Transport in.
2014 Серия: Topics in Applied Physics Язык: English Издание: Softcover reprint of Иллюстрации: 26 illustrations, black and white; xvi, 275 p. 26 illus.
Physics Of Hot Electron . Manufacturer warranty may not apply.
The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and . The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented.
It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering.