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by W.D. Westwood,etc.

  • ISBN: 0127447504
  • Category: Engineering
  • Author: W.D. Westwood,etc.
  • Subcategory: Engineering
  • Other formats: doc azw docx txt
  • Language: English
  • Publisher: Academic Press Inc; First Edition edition (August 8, 1975)
  • Pages: 436 pages
  • FB2 size: 1951 kb
  • EPUB size: 1161 kb
  • Rating: 4.1
  • Votes: 493
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com: Tantalum Thin Films: ISBN 0127447504, 1975; green paper covered boards with dust jacket; jacket slightly soiled and toned with light edge wear; stamping on front paste down; tight binding; Interior clean and unmarked; 8vo - over 7 3/4" - 9 3/4" Tall; 436 pages.

Tantalum(III) nitride is used as a thin film insulator in some microelectronic fabrication processes. The best studied chalcogenide is TaS2, a layered semiconductor, as seen for other transition metal dichalcogenides. Tantalum electrolytic capacitors exploit the tendency of tantalum to form a protective oxide surface layer, using tantalum powder, pressed into a pellet shape, as one "plate" of the capacitor, the oxide as the dielectric, and an electrolytic solution or conductive solid as the other "plate". Because the dielectric layer can be very thin (thinner than the similar layer in, for instance, an aluminium electrolytic capacitor), a high capacitance can be achieved in a small volume.

Tantalum films have been deposited on both glass and ceramic substrates by . The metastable phase is mainly observed in sputter-deposited thin films and a dependence on film thickness and deposition conditions have been reported. While normal dynamic sputtering with grounded substrates produced β-Ta films with a resistivity ϱ of 200 μΩ cm and a temperature coefficient of resistivity, α, of -50 ppm/°C, a substrate potential of -100 V produced . Ta films with ϱ 30 μΩ cm and α 2100 ppm/°C.

Thin film devices - Design and construction - Handbooks, manuals, etc. I. Seshan, Krishna. Examples include metallic tantalum films converted by thermal oxidation to tantalum pentoxide for use as antireflection coating in photovoltaic devices and as capacitor elements in microcircuits. Other metal oxides grown thermally have also been used as capacitor dielectrics in thin-film devices, to improve the bonding with glass in glass-to-metal seals and to improve corrosion resistance.

Fracture of Thin Tantalum Nitride Films on Ain Substrates. MRS Proceedings, Vol. 436, Issue. 2Westwood, W. Waterhouse, . and Wilcox, P. Tantalum Thin Films (Academic Press, New York, 1975), pp. 253–256

Fracture of Thin Tantalum Nitride Films on Ain Substrates. 253–256. 3Yasar, T. and Puri, . Thin Film Resistors and Capacitors for Hybrid Circuits, Electronic Packaging and Production, pp. 108–116, November (1979).

by William D. Westwood. Select Format: Hardcover. ISBN13:9780127447506. Release Date:January 1975.

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Deposition of thin films by the main physical deposition methods of vacuum evaporation, molecular-beam epitaxy and sputtering are described in some detail, as are those by the chemical deposition methods of electrodeposition, chemical vapour deposition and the Langmuir–Blodgett.

Deposition of thin films by the main physical deposition methods of vacuum evaporation, molecular-beam epitaxy and sputtering are described in some detail, as are those by the chemical deposition methods of electrodeposition, chemical vapour deposition and the Langmuir–Blodgett technique. Examples of structural features of some thin films are given, including their crystallography, larger-scale structure and film morphology.



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